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| Power Transistors 2SB1629 Silicon PNP epitaxial planar type For power amplification Unit: mm 4.60.2 s Features q q q 3.20.1 9.90.3 2.90.2 4.10.2 8.00.2 Solder Dip High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25C) Ratings -60 -60 -6 -6 -3 -1 40 2 150 -55 to +150 Unit V V V A A A W C C 15.00.3 3.00.2 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg 13.7-0.2 s Absolute Maximum Ratings +0.5 1.20.15 1.450.15 0.750.1 2.540.2 5.080.4 123 2.60.1 0.70.1 7 1:Base 2:Collector 3:Emitter TO-220E Full Pack Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency *h (TC=25C) Symbol ICBO ICEO IEBO VCEO hFE* VCE(sat) fT Conditions VCB = -60V, IE = 0 VEB = -40V, IB = 0 VEB = -6V, IC = 0 IC = -25mA, IB = 0 VCE = -4V, IC = - 0.5A IC = -2A, IB = - 0.05A VCE = -12V, IC = - 0.2A, f = 10MHz 30 -60 300 700 -1 V MHz min typ max -100 -100 -100 Unit A A A V FE Rank classification Q 300 to 500 P 400 to 700 Rank hFE 1 Power Transistors PC -- Ta 60 -6 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) With a 50 x 50 x 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25C -5 5 IB=-100mA -80mA -60mA -40mA -3 -20mA -2 -10mA -5mA -1 -2mA 0 0 20 40 60 80 100 120 140 160 0 -2 -4 -6 -8 -10 -12 0 0 0.4 0.8 2SB1629 IC -- VCE 6 VCE=-4V IC -- VBE Collector power dissipation PC (W) 50 Collector current IC (A) 40 (1) 30 -4 Collector current IC (A) 4 3 20 (2) (3) 0 (4) 2 TC=125C 25C -25C 10 1 1.2 1.6 2.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) -100 IC/IB=40 -30 -10 25C -3 -1 TC=100C -25C 10000 hFE -- IC VCE=-4V 1000 fT -- IC VCE=-12V f=10MHz TC=25C Forward current transfer ratio hFE 3000 TC=100C 25C Transition frequency fT (MHz) -1 -3 -10 300 1000 -25C 300 100 30 - 0.3 - 0.1 - 0.03 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 100 10 30 3 -1 -3 -10 10 - 0.01 - 0.03 - 0.1 - 0.3 1 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob -- VCB 1000 100 IE=0 f=1MHz TC=25C 30 ton, tstg, tf -- IC Pulsed tw=1ms Duty cycle=1% IC/IB=40 (-IB1=IB2) VCC=-50V TC=25C Area of safe operation (ASO) 10 ICP t=10ms 3 Non repetitive pulse TC=25C DC 1 1ms Collector output capacitance Cob (pF) Switching time ton,tstg,tf (s) 300 10 3 tf 1 ton 0.3 0.1 0.03 100 30 Collector current IC (A) -8 IC 0.3 tstg 10 0.1 3 0.03 1 -1 0.01 -3 -10 -30 -100 0 -2 -4 -6 0.01 -1 -3 -10 -30 -100 -300 -1000 Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) -- t 10000 Note: Rth was measured at Ta=25C and under natural convection. (1) PT=10V x 0.2A (2W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink 2SB1629 Thermal resistance Rth(t) (C/W) 1000 100 (1) (2) 10 1 0.1 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 |
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